Joining Silicon Carbide Plates by Titanium Disilicide-Based Compound

Titanium Impurities in Silicon, Diamond, and Silicon Carbide

Since transition metal impurities affect the electronic and optical properties of semiconductors [1], it is important to understand the role of such unavoidable impurities on those properties. At the same time, transition metals in semiconductors can be used in other unusual situations. The energy levels related to transition metal impurities are aligned with respect to each other for the same ...

Selective deposition of titanium disilicide

The titanium silicide thin films had been formed on Si substrate by reacting of TiX4 (X=Cl, Br) with Si under different experimental conditions. The Si consumption and the titanium silicide obtains were calculated by the film thickness. In some reactions, titanium silicide thin film was found not only on the Si substrates but also on the SiO2 wall at the outlet of the reaction chamber. The quan...

Nondestructive detection of titanium disilicide phase transformation by picosecond ultrasonics

We demonstrate that picosecond ultrasonics is a sensitive nondestructive probe of the formation of TiSi, from the reaction of titanium films on silicon annealed at temperatures of 300-800 “C. From the measured change in optical reflectivity, the responses due to electronic excitation, acoustic echoes, and thermal coupling to the underlying Si are resolved. The results show significant differenc...

Silicon Nitride and Silicon Carbide

Boron carbide/n-silicon carbide heterojunction diodes